Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits
نویسندگان
چکیده
In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flipflop based on a sense amplifier and a photon-emitting device. This method can be used even with deepsubmicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 μm CMOS process.
منابع مشابه
Fabrication of RF MEMS Components on CMOS Circuits
Recently deep submicron and SiGe (silicongermanium) bipolar CMOS technologies have enhanced the performance of Si-based radio frequency (RF) integrated circuits up to microwave frequencies. The integration of RF MEMS components, such as inductors and capacitors, could further improve the performance of key RF circuit blocks such as voltage controlled oscillators (VCO), low-noise amplifiers, fil...
متن کاملAdaptive Thermal Monitoring of Deep-Submicron CMOS VLSI Circuits
In integrated circuits accurate runtime sensing of on-chip temperature is required to establish efficient dynamic thermal management techniques. In this paper, we propose novel sensor allocation and placement algorithm and thermal sensing technique for indirect temperature estimation at arbitrary locations. As the experimental results indicate, the runtime thermal estimation method reduces temp...
متن کاملLeakage Reduction ONOFIC Approach for Deep Submicron VLSI Circuits Design
Minimizations of power dissipation, chip area with higher circuit performance are the necessary and key parameters in deep submicron regime. The leakage current increases sharply in deep submicron regime and directly affected the power dissipation of the logic circuits. In deep submicron region the power dissipation as well as high performance is the crucial concern since increasing importance ...
متن کاملMOCA ARM: Analog Reliability Measurement based on Monte Carlo Analysis
Due to the expected increase of defects in circuits based on deep submicron technologies, reliability has become an important design criterion. Although different approaches have been developed to estimate reliability in digital circuits and some measuring concepts have been separately presented to reveal the quality of analog circuit reliability in the literature, there is a gap to estimate re...
متن کاملIdentifying defects in deep-submicron CMOS ICs
Given the oft-cited difficulty of testing modern integrated circuits, the fact that CMOS ICs lend themselves to IDDQ testing is a piece of good fortune. But that valuable advantage is threatened by the rush of semiconductor technology to smaller feature sizes and faster, denser circuits, in line with the Semiconductor Industry Association's (SIA) Roadmap--its forecast for the CMOS IC industry. ...
متن کامل